Cite
Unified physical DC model of staggered amorphous InGaZnO transistors
MLA
Eugenio Cantatore, et al. “Unified Physical DC Model of Staggered Amorphous InGaZnO Transistors.” IEEE Transactions on Electron Devices, vol. 64, no. 3, Mar. 2017, pp. 1076–82. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....3046323ae533c8e95a256389941f7217&authtype=sso&custid=ns315887.
APA
Eugenio Cantatore, Fabrizio Torricelli, Zsolt Miklós Kovács-Vajna, Matteo Ghittorelli, Gerwin H. Gelinck, Luigi Colalongo, Carmine Garripoli, & Jan-Laurens van der Steen. (2017). Unified physical DC model of staggered amorphous InGaZnO transistors. IEEE Transactions on Electron Devices, 64(3), 1076–1082.
Chicago
Eugenio Cantatore, Fabrizio Torricelli, Zsolt Miklós Kovács-Vajna, Matteo Ghittorelli, Gerwin H. Gelinck, Luigi Colalongo, Carmine Garripoli, and Jan-Laurens van der Steen. 2017. “Unified Physical DC Model of Staggered Amorphous InGaZnO Transistors.” IEEE Transactions on Electron Devices 64 (3): 1076–82. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....3046323ae533c8e95a256389941f7217&authtype=sso&custid=ns315887.