Evolution of Lattice Strain in Hydrogen-Implanted Silicon Prior to Layer Splitting: An X-Ray Scattering Study

We have investigated the effects of hydrogen implantation in silicon wafers by x-ray scattering methods. Different crystalline orientations for the Si single crystals were studied, namely (100), (110) and (111) Si. Large strains normal to the surface were evidenced after implantation, which depends on the Si orientation and can be explained on the basis of the different alignment of the Si-Si bonds with respect to the crystal surface. A comparison with the results from infrared spectroscopy shows that strain is associated to specific H- related point defects, such as monohydride multivacancy and H2*. Finally the evolution of the stressed structure during annealing is discussed.