Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition

Authors :: Thierry Conard
Johannes Meersschaut
P. Fazan
Bastien Douhard
Paul Bailey
Marc Aoulaiche
Mihaela Popovici
Benjamin Groven
B. Kaczer
Annelies Delabie
Alain Moussa
Malgorzata Jurczak
Augusto Redolfi
J. A. van den Berg
S. Van Elshocht
J. Swerts
C. Adelmann
Source :: Microelectronic Engineering. 147:108-112
Publication Year :: 2015
Publisher :: Elsevier BV, 2015.
Abstract: © 2015 Elsevier B.V. All rights reserved. The impact of different Ru precursors and/or deposition methods on the electrical characteristics of Ru/SrTiOx/Ru capacitors has been investigated. The observed increase of the leakage current density (Jg) and the equivalent oxide thickness (EOT) for ALD (atomic layer deposition) deposited Ru layers compared to PVD (physical vapor deposition) deposited ones was found to be caused by a SrRuTiOx layer formation at the SrTiOx/Ru interface aided by the presence of the oxygen co-reactant used during the ALD, regardless of the precursor used. publisher: Elsevier articletitle: Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition journaltitle: Microelectronic Engineering articlelink: http://dx.doi.org/10.1016/j.mee.2015.04.076 content_type: article copyright: Copyright © 2015 Elsevier B.V. All rights reserved. ispartof: Microelectronic Engineering vol:147 pages:108-112 ispartof: location:ITALY, Udine status: published

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