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Record RF performance of standard 90 nm CMOS technology
- Source :
- IEEE International Electron Devices Meeting 2004, 441-444, STARTPAGE=441;ENDPAGE=444;TITLE=IEEE International Electron Devices Meeting 2004, Scopus-Elsevier
- Publication Year :
- 2005
- Publisher :
- IEEE, 2005.
-
Abstract
- We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency f/sub max/ (280 GHz), varactor tuning range and varactor and inductor quality factor.
- Subjects :
- Engineering
business.industry
Oscillation
Electrical engineering
Q-factor
Hardware_PERFORMANCEANDRELIABILITY
Inductor
radiofrequency integrated circuits
EWI-15529
Quality (physics)
Integrated injection logic
METIS-219036
IR-67491
CMOS
Nanoelectronics
Q factor
Hardware_INTEGRATEDCIRCUITS
CMOS logic circuits
nano electronics
business
Varicap
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- IEEE International Electron Devices Meeting 2004, 441-444, STARTPAGE=441;ENDPAGE=444;TITLE=IEEE International Electron Devices Meeting 2004, Scopus-Elsevier
- Accession number :
- edsair.doi.dedup.....34c095a4191ceb72675485251a91ee7c