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Raman Spectroscopy of DLC/a-Si Bilayer Film Prepared by Pulsed Filtered Cathodic Arc

Raman Spectroscopy of DLC/a-Si Bilayer Film Prepared by Pulsed Filtered Cathodic Arc

Authors :
Piyapong Asanithi
Krisda Siangchaew
Artorn Pokaipisit
Supanee Limsuwan
Pichet Limsuwan
C. Srisang
Source :
Journal of Nanomaterials, Vol 2012 (2012)
Publication Year :
2012
Publisher :
Hindawi Limited, 2012.

Abstract

DLC/a-Si bilayer film was deposited on germanium substrate. The a-Si layer, a seed layer, was firstly deposited on the substrate using DC magnetron sputtering and DLC layer was then deposited on the a-Si layer using pulsed filtered cathodic arc method. The bilayer films were deposited with different DLC/a-Si thickness ratios, including 2/2, 2/6, 4/4, 6/2, and 9/6. The effect of DLC/a-Si thickness ratios on the sp3content of DLC was analyzed by Raman spectroscopy. The results show that a-Si layer has no effect on the structure of DLC film. Furthermore, the upper shift inGwavenumber and the decrease inID/IGinform that sp3content of the film is directly proportional to DLC thickness. The plot modified from the three-stage model informed that the structural characteristics of DLC/a-Si bilayer films are located close to the tetrahedral amorphous carbon. This information may be important for analyzing and developing bilayer protective films for future hard disk drive.

Details

ISSN :
16874129 and 16874110
Volume :
2012
Database :
OpenAIRE
Journal :
Journal of Nanomaterials
Accession number :
edsair.doi.dedup.....359a8c570c9bc5c252def66587920293
Full Text :
https://doi.org/10.1155/2012/745126