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Raman Spectroscopy of DLC/a-Si Bilayer Film Prepared by Pulsed Filtered Cathodic Arc
Raman Spectroscopy of DLC/a-Si Bilayer Film Prepared by Pulsed Filtered Cathodic Arc
- Source :
- Journal of Nanomaterials, Vol 2012 (2012)
- Publication Year :
- 2012
- Publisher :
- Hindawi Limited, 2012.
-
Abstract
- DLC/a-Si bilayer film was deposited on germanium substrate. The a-Si layer, a seed layer, was firstly deposited on the substrate using DC magnetron sputtering and DLC layer was then deposited on the a-Si layer using pulsed filtered cathodic arc method. The bilayer films were deposited with different DLC/a-Si thickness ratios, including 2/2, 2/6, 4/4, 6/2, and 9/6. The effect of DLC/a-Si thickness ratios on the sp3content of DLC was analyzed by Raman spectroscopy. The results show that a-Si layer has no effect on the structure of DLC film. Furthermore, the upper shift inGwavenumber and the decrease inID/IGinform that sp3content of the film is directly proportional to DLC thickness. The plot modified from the three-stage model informed that the structural characteristics of DLC/a-Si bilayer films are located close to the tetrahedral amorphous carbon. This information may be important for analyzing and developing bilayer protective films for future hard disk drive.
- Subjects :
- Materials science
Article Subject
Bilayer
Analytical chemistry
chemistry.chemical_element
Germanium
Substrate (electronics)
Sputter deposition
Cathodic protection
symbols.namesake
chemistry
Amorphous carbon
lcsh:Technology (General)
symbols
lcsh:T1-995
General Materials Science
Raman spectroscopy
Layer (electronics)
Subjects
Details
- ISSN :
- 16874129 and 16874110
- Volume :
- 2012
- Database :
- OpenAIRE
- Journal :
- Journal of Nanomaterials
- Accession number :
- edsair.doi.dedup.....359a8c570c9bc5c252def66587920293
- Full Text :
- https://doi.org/10.1155/2012/745126