Porous Field-Effect Transistors Based on a Semiconductive Metal-Organic Framework

Recently, the emergence of conductive metal–organic frameworks (MOFs) has given great prospects for their applications as active materials in electronic devices. In this work, a high-quality, free-standing conductive MOF membrane was prepared by an air–liquid interfacial growth method. Accordingly, field-effect transistors (FETs) possessing a crystalline microporous MOF channel layer were successfully fabricated for the first time. The porous FETs exhibited p-type behavior, distinguishable on/off ratios, and excellent field-effect hole mobilities as high as 48.6 cm2 V–1 s–1, which is even comparable to the highest value reported for solution-processed organic or inorganic FETs.