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Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
- Publication Year :
- 2018
- Publisher :
- AIP Publishing, 2018.
-
Abstract
- Control of leakage currents in the buffer layers of GaN based transistors on Si substrates is vital for the demonstration of high performance devices. Here, we show that the growth conditions during the metal organic chemical vapour deposition growth of the graded AlGaN strain relief layers (SRLs) can significantly influence the vertical leakage. Using scanning capacitance microscopy, secondary ion mass spectrometry, and transmission electron microscopy, we investigate the origins of leakage paths and show that they result from the preferential incorporation of oxygen impurities on the side wall facets of the inverted hexagonal pyramidal pits which can occur during the growth of the graded AlGaN SRL. We also show that when 2D growth of the AlGaN SRL is maintained a significant increase in the breakdown voltage can be achieved even in much thinner buffer layer structures. These results demonstrate the importance of controlling the morphology of the high electron mobility transistor buffer layer as even at a very low density the leakage paths identified would provide leakage paths in large area devices.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Transistor
General Physics and Astronomy
02 engineering and technology
Chemical vapor deposition
High-electron-mobility transistor
Scanning capacitance microscopy
021001 nanoscience & nanotechnology
5104 Condensed Matter Physics
01 natural sciences
law.invention
Secondary ion mass spectrometry
Transmission electron microscopy
law
0103 physical sciences
Breakdown voltage
Optoelectronics
0210 nano-technology
business
51 Physical Sciences
Leakage (electronics)
40 Engineering
Subjects
Details
- ISSN :
- 00218979
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....375276c8f13a55d8bb64249b6d7d4bd3