Investigation of Compositional Disorder in GaAsN:H

The compositional disorder in as‐grown and hydrogen irradiated GaAs1−x N x has been investigated by photoluminescence (PL) and PL excitation spectra. The static disorder introduced by N atoms in the GaAs host lattice is removed upon H irradiation of the samples, as shown by a significant decrease in the free‐exciton broadening. A theoretical model developed for a purely random alloy well accounts for the dependence of the free‐exciton PLE linewidth on N concentration.