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Conductance quantization in etched Si/SiGe quantum point contacts
- Source :
- Physical review. B, Condensed matter and materials physics (Online) 74 (2006): 35321. doi:10.1103/PhysRevB.74.035321, info:cnr-pdr/source/autori:G. Scappucci 1; L. Di Gaspare 1; E. Giovine 2; A. Notargiacomo 2; R. Leoni 2; F. Evangelisti 1-2/titolo:Conductance quantization in etched Si%2FSiGe quantum point contacts/doi:10.1103%2FPhysRevB.74.035321/rivista:Physical review. B, Condensed matter and materials physics (Online)/anno:2006/pagina_da:35321/pagina_a:/intervallo_pagine:35321/volume:74
- Publication Year :
- 2006
- Publisher :
- American Physical Society, College Park, Md. , Stati Uniti d'America, 2006.
-
Abstract
- We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidences of the formation of a half 1e2/h plateau, supporting the speculation that adiabatic transmission occurs through 1D modes with complete removal of valley and spin degeneracies.<br />Comment: to appear in Physical Review B
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Physical review. B, Condensed matter and materials physics (Online) 74 (2006): 35321. doi:10.1103/PhysRevB.74.035321, info:cnr-pdr/source/autori:G. Scappucci 1; L. Di Gaspare 1; E. Giovine 2; A. Notargiacomo 2; R. Leoni 2; F. Evangelisti 1-2/titolo:Conductance quantization in etched Si%2FSiGe quantum point contacts/doi:10.1103%2FPhysRevB.74.035321/rivista:Physical review. B, Condensed matter and materials physics (Online)/anno:2006/pagina_da:35321/pagina_a:/intervallo_pagine:35321/volume:74
- Accession number :
- edsair.doi.dedup.....39124d10d0e7c7072e7e254f13d6c572
- Full Text :
- https://doi.org/10.1103/PhysRevB.74.035321