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Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe
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Abstract
- We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transmission electron microscopy and X-ray diffraction confirm the good control over the growth of these structures.
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....392f62303b59d89fd9482f1cf568c06f