Hydrogenated amorphous silicon technology for chemically sensitive thin-film transistors

Top-gate hydrogenated amorphous silicon thin-film transistors have been fabricated which show electrical characteristics suitable for application in the field of chemical sensors. These devices have been specialized to two different types of sensors: (a) Pd-gate hydrogen sensors; (b) K+ ion sensors. The obtained results show that the present technology can be successfully applied to the fabrication of gas-sensitive and ion-sensitive field-effect transistors.