Highly reflective nanotextured sputtered silver back reflector for flexible high-efficiency n–i–p thin-film silicon solar cells

High reflectivity is essential when a metal is used as back contact and reflector in thin film silicon solar cells. We show that thermal annealing at 150 °C improves the reflectivity of silver films deposited by sputtering at room temperature on nanotextured substrates. The annealing provokes two interlinked effects: rearrangement of the silver layer with a modification of its morphology and an increase of up to 42 in the grain size of the polycrystalline film for the preferential orientation as measured by X ray diffraction. The main consequence of these two mechanisms is a large increase in the reflectivity of silver when measured in air. This reflectivity increase is also noticeable in devices: amorphous silicon thin film solar cells grown on annealed silver films yield higher internal and external quantum efficiencies compared to cells grown on as deposited silver. The morphology modification smoothes down the substrate which is revealed by a clear increase of the open circuit voltage and fill factor of the cells grown on top. An amorphous silicon cell with a 200 nm nominally thick i layer fabricated on a flexible plastic substrate yielded an initial efficiency close to 10 with 15.9 mA/cm 2 of short circuit current using highly reflective annealed textured silver. We also propose for industrial purpose the sputtering of thin silver layer (120 nm) under moderate substrate temperature (~150 °C) to increase the layer reflectivity which avoids lengthening of the back reflector fabrication. © 2011 Elsevier B.V. All rights reserved.