Cite
Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications
MLA
Masanori Tsukuda, et al. “Modelling of the Shoot-through Phenomenon Introduced by the next Generation IGBT in Inverter Applications.” Microelectronics Reliability, July 2017, pp. 465–69. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....3c529ecc8ea13e4725afabbd2aef9d80&authtype=sso&custid=ns315887.
APA
Masanori Tsukuda, Tamotsu Ninomiya, Ichiro Omura, Keiji Wada, Seiya Abe, & Kazunori Hasegawa. (2017). Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications. Microelectronics Reliability, 465–469.
Chicago
Masanori Tsukuda, Tamotsu Ninomiya, Ichiro Omura, Keiji Wada, Seiya Abe, and Kazunori Hasegawa. 2017. “Modelling of the Shoot-through Phenomenon Introduced by the next Generation IGBT in Inverter Applications.” Microelectronics Reliability, July, 465–69. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....3c529ecc8ea13e4725afabbd2aef9d80&authtype=sso&custid=ns315887.