Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range

Authors :: Qiandong Zhuang
Peter J. Carrington
Richard Beanland
R. Wheatley
Anthony Krier
Ana M. Sanchez
M. de la Mare
Department of Physics [Lancaster]
Lancaster University
Department of Physics
University of Warwick [Coventry]
Source :: Journal of Physics D: Applied Physics, Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (34), pp.345103. ⟨10.1088/0022-3727/43/34/345103⟩
Publication Year :: 2010
Publisher :: IOP Publishing, 2010.
Abstract: We report on the epitaxial growth and photoluminescence (PL) of InAs0.926Sb0.063N0.011/InAs multi-quantum wells (QWs) grown using plasma-assisted molecular beam epitaxy. These dilute nitride QWs exhibit bright PL in the mid-infrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent PL behaviour is consistent with a type I band line-up in these QWs, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.

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