28-nm Bulk and FDSOI Cryogenic MOSFET : (Invited Paper)

Authors :: Arnout Beckers
Farzan Jazaeri
Christian Enz
Source :: 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).
Publication Year :: 2018
Publisher :: IEEE, 2018.
Abstract: This paper presents an intensive overview of the characterization and modeling of advanced 28-nm hulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature.

Subjects :: Materials science
CMOS
business.industry
MOSFET
Semiconductor device modeling
Optoelectronics
Silicon on insulator
Cryogenics
Cryogenic temperature
business
Cmos process
MOSQUITO
Characterization (materials science)

Database :: OpenAIRE
Journal :: 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)
Accession number :: edsair.doi.dedup.....3d9ee53878bc1634b2668098a307c82b

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