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Strain mapping of silicon carbon suspended membranes
- Source :
- Materials & Design, Vol 211, Iss, Pp 110135-(2021)
- Publication Year :
- 2021
- Publisher :
- Elsevier BV, 2021.
-
Abstract
- The alloy silicon carbon (Si1-yCy) has various strain engineering applications. It is often implemented as a dopant diffusion barrier and has been identified as a potential buffer layer for cubic silicon carbide (3C-SiC) heteroepitaxy. While suspended membranes formed from thin films of semiconductor (Ge and 3C-SiC) and dielectric (Si3N4) materials have been well studied, pseudomorphic, defect-free epilayers under high levels of tensile strain have received little attention. Often, tensile strain is a desired quality of semiconductors and enhancing this property can lead to various benefits of subsequent device applications. The strain state and crystalline tilt of suspended Si1-yCy epilayers have been investigated through micro-X-ray diffraction techniques. The in-plane tensile strain of the alloy was found to increase from 0.67% to 0.82%. This strain increase could reduce the C content required to achieve suitable levels of strain in such alloys and further strain enhancement could be externally induced. The source of this strain increase was found to stem from slight tilts at the edges of the membranes, however, the bulk of the suspended films remained flat. The novel process utilised to fabricate suspended Si1-yCy thin-films is applicable to many other materials that are typically not resistant to anisotropic Si wet etchants.
- Subjects :
- Materials science
Diffusion barrier
Silicon
Alloy
chemistry.chemical_element
Silicon carbon
engineering.material
Strain
Strain engineering
General Materials Science
Thin film
Composite material
Materials of engineering and construction. Mechanics of materials
QC
Membranes
Strain (chemistry)
Dopant
Mechanical Engineering
Silicon boron
technology, industry, and agriculture
MEMS
Membrane
chemistry
Mechanics of Materials
TA401-492
engineering
Subjects
Details
- ISSN :
- 02641275
- Volume :
- 211
- Database :
- OpenAIRE
- Journal :
- Materials & Design
- Accession number :
- edsair.doi.dedup.....3e0dc2857341809d5a8b658b28135f40
- Full Text :
- https://doi.org/10.1016/j.matdes.2021.110135