Donor Impurity-Related Optical Absorption in GaAs Elliptic-Shaped Quantum Dots

WOS: 000398405000001
The conduction band and electron-donor impurity states in elliptic-shaped GaAs quantum dots under the effect of an externally applied electric field are calculated within the effective mass and adiabatic approximations using two different numerical approaches: a spectral scheme and the finite element method. The resulting energies and wave functions become the basic information needed to evaluate the interstate optical absorption in the system, which is reported as a function of the geometry, the electric field strength, and the temperature.
Vietnam National Foundation for Science and Technology Development (NAFOSTED) [103.01-2015.93]; Migracion Sismica Pre-Apilado en Profundidad por Extrapolacion de Campos de Onda Utilizando Computacion de Alto Desempeno para Datos Masivos en Zonas Complejas [111553130555]
This research is funded by Vietnam National Foundation for Science and Technology Development (NAFOSTED) under Grant no. 103.01-2015.93. The authors are grateful to the Colombian Agencies CODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia) and Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (C.A. Duque and A.L. Morales Exclusive Dedication Projects 2016-2017). M.A. Londono is grateful to Colciencias-Ecopetrol for financial support through the project Migracion Sismica Pre-Apilado en Profundidad por Extrapolacion de Campos de Onda Utilizando Computacion de Alto Desempeno para Datos Masivos en Zonas Complejas (Code 111553130555).