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Topological Defects in Topological Insulators and Bound States at Topological Superconductor Vortices
- Source :
- Materials, Materials; Volume 7; Issue 3; Pages: 1652-1686, Materials, Vol 7, Iss 3, Pp 1652-1686 (2014), Digital.CSIC. Repositorio Institucional del CSIC, instname
- Publication Year :
- 2014
- Publisher :
- MDPI AG, 2014.
-
Abstract
- The scattering of Dirac electrons by topological defects could be one of the most relevant sources of resistance in graphene and at the boundary surfaces of a three-dimensional topological insulator (3D TI). In the long wavelength, continuous limit of the Dirac equation, the topological defect can be described as a distortion of the metric in curved space, which can be accounted for by a rotation of the Gamma matrices and by a spin connection inherited with the curvature. These features modify the scattering properties of the carriers. We discuss the self-energy of defect formation with this approach and the electron cross-section for intra-valley scattering at an edge dislocation in graphene, including corrections coming from the local stress. The cross-section contribution to the resistivity, ρ, is derived within the Boltzmann theory of transport. On the same lines, we discuss the scattering of a screw dislocation in a two-band 3D TI, like Bi1-xSbx, and we present the analytical simplified form of the wavefunction for gapless helical states bound at the defect. When a 3D TI is sandwiched between two even-parity superconductors, Dirac boundary states acquire superconductive correlations by proximity. In the presence of a magnetic vortex piercing the heterostructure, two Majorana states are localized at the two interfaces and bound to the vortex core. They have a half integer total angular momentum each, to match with the unitary orbital angular momentum of the vortex charge.<br />This work was done with financial support from FP7/2007-2013 under the grant no. 264098—MAMA (Multifunctional Advanced Materials and Nanoscale Phenomena), MIUR (Ministero dell’ Istruzione, dell’ Università e della Ricerca)-Italy through the Prin-Project 2009 “Nanowire high critical temperature superconductor field-effect devices” and Futuro In Ricerca (FIRB)/2013-2015. Vincenzo Parente and Francisco Guinea acknowledge financial support from MINECO (Ministerio Economía y Competitividad), Spain, through grant FIS2011-23713, and the European Union, through grant 290846.
- Subjects :
- Dirac electrons
Two-band topological insulator
Dirac (software)
02 engineering and technology
lcsh:Technology
01 natural sciences
Symmetry protected topological order
Article
Topological defects
Topological defect
symbols.namesake
Majorana bound state
Total angular momentum quantum number
Quantum mechanics
0103 physical sciences
Topological order
General Materials Science
lcsh:Microscopy
010306 general physics
topological defects
two-band topological insulators
Topological quantum number
lcsh:QC120-168.85
Physics
lcsh:QH201-278.5
Condensed matter physics
lcsh:T
021001 nanoscience & nanotechnology
lcsh:TA1-2040
Topological insulator
Dirac equation
Dirac electron
symbols
lcsh:Descriptive and experimental mechanics
lcsh:Electrical engineering. Electronics. Nuclear engineering
Materials Science (all)
lcsh:Engineering (General). Civil engineering (General)
0210 nano-technology
Two-band topological insulators
lcsh:TK1-9971
Subjects
Details
- ISSN :
- 19961944
- Volume :
- 7
- Database :
- OpenAIRE
- Journal :
- Materials
- Accession number :
- edsair.doi.dedup.....3f680343f0beafad83891e6b76552b92
- Full Text :
- https://doi.org/10.3390/ma7031652