On treatment of ultra-low-k SiCOH in CF4 plasmas: Correlation between the concentration of etching products and etching rate

MLA

U. Macherius, et al. On Treatment of Ultra-Low-k SiCOH in CF4 Plasmas: Correlation between the Concentration of Etching Products and Etching Rate. Jan. 2015. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....3fa17d39f816c99b4a4194807a1a28bd&authtype=sso&custid=ns315887.

APA

U. Macherius, B. Uhlig, Matthias Schaller, H. Zimmermann, Stefan E. Schulz, Norbert Lang, Sven Zimmermann, & Jürgen Röpcke. (2015). On treatment of ultra-low-k SiCOH in CF4 plasmas: Correlation between the concentration of etching products and etching rate.

Chicago

U. Macherius, B. Uhlig, Matthias Schaller, H. Zimmermann, Stefan E. Schulz, Norbert Lang, Sven Zimmermann, and Jürgen Röpcke. 2015. “On Treatment of Ultra-Low-k SiCOH in CF4 Plasmas: Correlation between the Concentration of Etching Products and Etching Rate,” January. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....3fa17d39f816c99b4a4194807a1a28bd&authtype=sso&custid=ns315887.