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A stress relaxation mechanism through buckling-induced dislocations in thin films
- Source :
- Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2010, 108 (2), pp.026104. ⟨10.1063/1.3457225⟩
- Publication Year :
- 2010
- Publisher :
- AIP Publishing, 2010.
-
Abstract
- We report on molecular dynamics simulations of thin film buckling which show that during the buckling phenomena dislocations can be emitted from specific region of the film where the heterogeneous stress was found to be maximum and larger than in the planar adherent part. A scenario of formation of misfit dislocations in the planar interface which lead to stress relaxation is finally proposed.
- Subjects :
- Materials science
Condensed matter physics
General Physics and Astronomy
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Condensed Matter::Soft Condensed Matter
Stress (mechanics)
Condensed Matter::Materials Science
Molecular dynamics
Planar
Buckling
0103 physical sciences
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Stress relaxation
Thin film
010306 general physics
0210 nano-technology
ComputingMilieux_MISCELLANEOUS
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 108
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....3fb47f238035ffa11e7b55757ceb2480
- Full Text :
- https://doi.org/10.1063/1.3457225