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Semiconductor-Nanowire-Based Superconducting Qubit
- Source :
- Physical Review Letters. 115
- Publication Year :
- 2015
- Publisher :
- American Physical Society (APS), 2015.
-
Abstract
- We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (0.8 {\mu}s) and dephasing times (1 {\mu}s), exceeding gate operation times by two orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces crosstalk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.
- Subjects :
- Physics
Quantum Physics
Flux qubit
Charge qubit
Condensed Matter - Mesoscale and Nanoscale Physics
Orders of magnitude (temperature)
business.industry
Condensed Matter - Superconductivity
Dephasing
Nanowire
FOS: Physical sciences
General Physics and Astronomy
Superconductivity (cond-mat.supr-con)
Phase qubit
Condensed Matter::Materials Science
Computer Science::Emerging Technologies
Controlled NOT gate
Quantum mechanics
Qubit
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Optoelectronics
Quantum Physics (quant-ph)
business
Subjects
Details
- ISSN :
- 10797114 and 00319007
- Volume :
- 115
- Database :
- OpenAIRE
- Journal :
- Physical Review Letters
- Accession number :
- edsair.doi.dedup.....3fcb40fe78110e484d6dddc61a4084ba