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Inflection Phenomenon in Cryogenic MOSFET Behavior
- Source :
- IEEE Transactions on Electron Devices. 67:1357-1360
- Publication Year :
- 2020
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2020.
-
Abstract
- This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the current in weak and moderate inversion at a given gate voltage compared to the drift-diffusion current. This phenomenon is explained by introducing a Gaussian distribution of localized states centered around the band edge. The localized states are attributed to disorder and interface traps. The proposed model allows to extract the density of localized states at the interface from the dc current measurements.
- Subjects :
- interface traps
Materials science
mosfet
Gaussian
01 natural sciences
law.invention
Dc current
symbols.namesake
law
0103 physical sciences
MOSFET
cryogenic
Electrical and Electronic Engineering
Drain current
010302 applied physics
cmos technology
Condensed matter physics
Transistor
temperature
disorder
Gate voltage
Electronic, Optical and Magnetic Materials
band tail
CMOS
symbols
cryo-cmos
inflection
transistors
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 67
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi.dedup.....401288d4df00d416da50c7864976dd03
- Full Text :
- https://doi.org/10.1109/ted.2020.2965475