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Inflection Phenomenon in Cryogenic MOSFET Behavior

Authors :
Arnout Beckers
Christian Enz
Farzan Jazaeri
Source :
IEEE Transactions on Electron Devices. 67:1357-1360
Publication Year :
2020
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2020.

Abstract

This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the current in weak and moderate inversion at a given gate voltage compared to the drift-diffusion current. This phenomenon is explained by introducing a Gaussian distribution of localized states centered around the band edge. The localized states are attributed to disorder and interface traps. The proposed model allows to extract the density of localized states at the interface from the dc current measurements.

Details

ISSN :
15579646 and 00189383
Volume :
67
Database :
OpenAIRE
Journal :
IEEE Transactions on Electron Devices
Accession number :
edsair.doi.dedup.....401288d4df00d416da50c7864976dd03
Full Text :
https://doi.org/10.1109/ted.2020.2965475