Transient extreme ultraviolet measurement of element-specific charge transfer dynamics in multiple-material junctions

The absorption of solid state materials in complex photonic and optoelectronic devices overlap in the visible spectrum. Due to the overlap of spectral features, ultrafast measurements of charge carrier dynamics and transport is obscured. Here, the element specificity of transient extreme ultraviolet (XUV) spectroscopy is advanced as a probe for studying photoexcited charge transport in multiple-material junctions. The core-hole excited by the XUV transitions also imparts structural information on to the probed electronic transition. Transient XUV can therefore measure electron and averaged phonon dynamics for each elemental species in a junction. Application to polaron measurement in α-Fe_2O_3, valley-specific scattering in Si, and charge transfer in a nanoscale Ni-TiO_2-Si junction will be discussed.