Numerical and experimental analysis of single crystal diamond schottky barrier diodes

We present our findings on the numerical and experimental analysis of diamond Schottky Barrier diodes (SBDs) comprising of intrinsic single crystal (SC) chemical vapour deposited (CVD) diamond layers grown on highly boron doped substrates also grown by CVD. Good correlation with experimental results has been achieved through numerical modelling that has incorporated previously reported data on transport physics and carrier activation. With our numerical model, we are able to match to within 12 to 15% of the measured forward characteristics of fabricated diamond SBDs up to 2 V in excess of the turn on voltage, for two different Schottky metals.