Cite
Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN
MLA
Debdeep Jena, et al. “Molecular Beam Epitaxial Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN.” Applied Physics Letters, vol. 115, Oct. 2019, p. 172101. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....4191db372d458ea1280ce792aeec4cc1&authtype=sso&custid=ns315887.
APA
Debdeep Jena, Joseph Casamento, John Wright, Huili Grace Xing, & Reet Chaudhuri. (2019). Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN. Applied Physics Letters, 115, 172101.
Chicago
Debdeep Jena, Joseph Casamento, John Wright, Huili Grace Xing, and Reet Chaudhuri. 2019. “Molecular Beam Epitaxial Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN.” Applied Physics Letters 115 (October): 172101. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....4191db372d458ea1280ce792aeec4cc1&authtype=sso&custid=ns315887.