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High-gain low-threshold InAs/InGaAs/GaAs quantum dot lasers emitting around 1300 nm
- Source :
- Physica status solidi. C, Current topics in solid state physics, 3 (2006)., info:cnr-pdr/source/autori:Salhi A, Martiradonna L, Fortunato L, Tasco V, Visimberga G, Cingolani R, Passaseo A, De Vittorio M/titolo:High-gain low-threshold InAs%2FInGaAs%2FGaAs quantum dot lasers emitting around 1300 nm/doi:/rivista:Physica status solidi. C, Current topics in solid state physics (Print)/anno:2006/pagina_da:/pagina_a:/intervallo_pagine:/volume:3
- Publication Year :
- 2006
-
Abstract
- Three semiconductor laser structures containing 1, 3 and 5 layers of self organized InAs/InGaAs/GaAs quantum dots (QDs) have been grown by Molecular Beam Epitaxy. Broad area lasers were processed from the grown wafers and tested. These structures show a linear increase of the modal gain with the number of QDs layers with an average modal gain per QDs layer of ∼5 cm–1. A maximum modal gain of 25 cm–1 was obtained at room temperature (RT) from the sample containing 5 layers of QDs. A transparency current density and a low internal loss value of ∼5.5 A/cm2 per QD layer and 1.5 cm–1 were deduced respectively. For an infinite cavity length a minimum threshold current density of ∼9 A/cm2 per QD layer was inferred. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Physica status solidi. C, Current topics in solid state physics, 3 (2006)., info:cnr-pdr/source/autori:Salhi A, Martiradonna L, Fortunato L, Tasco V, Visimberga G, Cingolani R, Passaseo A, De Vittorio M/titolo:High-gain low-threshold InAs%2FInGaAs%2FGaAs quantum dot lasers emitting around 1300 nm/doi:/rivista:Physica status solidi. C, Current topics in solid state physics (Print)/anno:2006/pagina_da:/pagina_a:/intervallo_pagine:/volume:3
- Accession number :
- edsair.doi.dedup.....43d8d4e2a0a9f9322a212026d6189ec9