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Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions
- Publication Year :
- 2014
-
Abstract
- We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.
- Subjects :
- Physics
Fabrication
Physics and Astronomy (miscellaneous)
Condensed Matter - Mesoscale and Nanoscale Physics
business.industry
Graphene
Aucun
FOS: Physical sciences
Biasing
Epitaxy
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
law.invention
Tunnel magnetoresistance
Condensed Matter::Materials Science
Ferromagnetism
law
Condensed Matter::Superconductivity
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Electrode
Optoelectronics
Condensed Matter::Strongly Correlated Electrons
business
Electronic band structure
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....44057199557faa9cc6f7e1265848587c