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Emerging many-body effects in semiconductor artificial graphene with low disorder

Authors :
Vittorio Pellegrini
Lingjie Du
Sheng Wang
Diego Scarabelli
Shalom J. Wind
Geoff Gardner
Aron Pinczuk
Michael J. Manfra
Saeed Fallahi
Loren Pfeiffer
Ken W. West
Source :
Nature Communications, Vol 9, Iss 1, Pp 1-6 (2018), Nature Communications
Publication Year :
2018
Publisher :
Nature Publishing Group, 2018.

Abstract

The interplay between electron–electron interactions and the honeycomb topology is expected to produce exotic quantum phenomena and find applications in advanced devices. Semiconductor-based artificial graphene (AG) is an ideal system for these studies that combines high-mobility electron gases with AG topology. However, to date, low-disorder conditions that reveal the interplay of electron–electron interaction with AG symmetry have not been achieved. Here, we report the creation of low-disorder AG that preserves the near-perfection of the pristine electron layer by fabricating small period triangular antidot lattices on high-quality quantum wells. Resonant inelastic light scattering spectra show collective spin-exciton modes at the M-point's nearly flatband saddle-point singularity in the density of states. The observed Coulomb exchange interaction energies are comparable to the gap of Dirac bands at the M-point, demonstrating interplay between quasiparticle interactions and the AG potential. The saddle-point exciton energies are in the terahertz range, making low-disorder AG suitable for contemporary optoelectronic applications.<br />Artificial nanostructures designed to simulate models of materials such as graphene provide insights into the material physics but can also have practical advantages. Du et al. create low-disorder artificial graphene devices, and present evidence of terahertz spin-exciton modes and large Coulomb interactions.

Details

Language :
English
ISSN :
20411723
Volume :
9
Issue :
1
Database :
OpenAIRE
Journal :
Nature Communications
Accession number :
edsair.doi.dedup.....44a5e598c454018b78e04cb4adede667
Full Text :
https://doi.org/10.1038/s41467-018-05775-4