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Effects of organic material on magnetoresistance in electron-doped double perovskite
- Source :
- Journal of Materials Science: Materials in Electronics. 32:18711-18720
- Publication Year :
- 2021
- Publisher :
- Springer Science and Business Media LLC, 2021.
-
Abstract
- The Curie temperature of electron-doped Sr2FeMoO6 can be optimized significantly due to the band-filling effect, but accompanying an almost absent low-field magnetoresistance (LFMR), which is unfavorable to applications in the magnetoresistive devices operated at room-temperature. Our previous works confirmed that, a remarkable enhanced LFMR was observed in Sr2FeMoO6 by modifying the grain boundary with insulating organic small molecules (glycerin, CH2OHCHOHCH2OH). However, in this work, modifying the grain boundary strength of the La0.5Sr1.5FeMoO6 with the insulating organic macromolecules (oleic acid, CH3(CH2)7CH=CH(CH2)7COOH) or small molecules (glycerin), both of them have negligible functions on the magnetoresistance behavior in La0.5Sr1.5FeMoO6. Contrary to the glycerin-modified Sr2FeMoO6, Sr2FeMoO6/oleic acid composites don’t exhibit an obviously increased magnetoresistance property. Based on the above experimental results and the related works, it is proposed that, maintaining high spin polarization of the carriers at the Fermi level and improving the tunneling process across the grain boundary by using the suitable organic materials are decisive factors for optimizing the magnetoresistance behavior in the similar electron-doped double perovskites.
- Subjects :
- Work (thermodynamics)
Materials science
Condensed matter physics
Spin polarization
Magnetoresistance
Fermi level
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Oleic acid
chemistry.chemical_compound
symbols.namesake
chemistry
symbols
Curie temperature
Grain boundary
Electrical and Electronic Engineering
Quantum tunnelling
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi.dedup.....4509e8ac39f0b06bd065f48572869465
- Full Text :
- https://doi.org/10.1007/s10854-021-06390-8