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A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters
- Source :
- Solid-State Electronics, Solid-State Electronics, 2018, 143, pp.10-19. ⟨10.1016/j.sse.2017.11.012⟩, Solid-State Electronics, Elsevier, 2018, 143, pp.10-19. ⟨10.1016/j.sse.2017.11.012⟩
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Abstract
- International audience; The band-modulation and sharp-switching mechanisms in Z2-FET device operated as a capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the memory performance are discussed based on detailed experiments and simulations. This 1T-DRAM memory does not suffer from super-coupling effect and can be integrated in sub-10 nm thick SOI films. It offers low leakage current, high current margin, long retention, low operating voltage especially for programming, and high speed. The Z2-FET is suitable for embedded memory applications.
- Subjects :
- 010302 applied physics
Hardware_MEMORYSTRUCTURES
Computer science
Silicon on insulator
Embedded memory
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
Margin (machine learning)
0103 physical sciences
Materials Chemistry
Key (cryptography)
Electronic engineering
Hardware_INTEGRATEDCIRCUITS
High current
Electrical and Electronic Engineering
Operating voltage
Current (fluid)
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
0210 nano-technology
Dram memory
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 143
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi.dedup.....461ea48c7471f2eb40493e43340108e9
- Full Text :
- https://doi.org/10.1016/j.sse.2017.11.012