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High-Gain and High-Bandwidth AlGaN/GaN High Electron Mobility Transistor Comparator with High-Temperature Operation
- Source :
- Japanese Journal of Applied Physics. 50:04DF02
- Publication Year :
- 2011
- Publisher :
- IOP Publishing, 2011.
-
Abstract
- This paper presents the dc and dynamic characterizations of a GaN-based voltage comparator, fabricated with monolithic integration of enhancement-mode (E-mode) and depletion-mode (D-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The comparator features high gain (>31 dB) and wide bandwidth (>4 MHz), and small propagation delay time (
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Comparator
business.industry
Transistor
Bandwidth (signal processing)
General Engineering
General Physics and Astronomy
Propagation delay
High-electron-mobility transistor
Integrated circuit
Atmospheric temperature range
law.invention
law
Power electronics
Optoelectronics
business
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 50
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....4681d70ba3413ec82d9b71c98fc517d2