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Study of Temperature-Dependent Carrier Transport in a p-GaN/i-InGaN/n-GaN Solar Cell Heterostructure using Ultrafast Spectroscopy
- Source :
- Scopus-Elsevier
- Publication Year :
- 2013
- Publisher :
- OSA, 2013.
-
Abstract
- Temperature-dependent carrier transport is investigated using ultrafast spectroscopy in a p-GaN/i-InGaN/n-GaN solar cell with heavily-doped layers to compensate for polarization charges at the hetero-interface. We observe a flip in the transport direction at 110 K.
- Subjects :
- Materials science
business.industry
Gallium nitride
Heterojunction
Polarization (waves)
Photon counting
Quantitative Biology::Cell Behavior
law.invention
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
law
Electric field
Solar cell
Optoelectronics
Physics::Chemical Physics
business
Spectroscopy
Ultrashort pulse
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- CLEO: 2013
- Accession number :
- edsair.doi.dedup.....470a37e423479fe1d9330a4a54339a04