Study of Temperature-Dependent Carrier Transport in a p-GaN/i-InGaN/n-GaN Solar Cell Heterostructure using Ultrafast Spectroscopy

Authors :: Grace D. Metcalfe
Samantha C. Cruz
Steven P. DenBaars
Robert M. Farrell
Hongen Shen
Anand V. Sampath
Meredith Reed
Carl J. Neufeld
Yutaka Terao
Michael Iza
Naresh C. Das
Shuji Nakamura
Michael Wraback
Lee E. Rodak
Jordan R. Lang
Nathan G. Young
James S. Speck
Stacia Keller
Nathaniel T. Woodward
Blair C. Connelly
Umesh K. Mishra
Source :: Scopus-Elsevier
Publication Year :: 2013
Publisher :: OSA, 2013.
Abstract: Temperature-dependent carrier transport is investigated using ultrafast spectroscopy in a p-GaN/i-InGaN/n-GaN solar cell with heavily-doped layers to compensate for polarization charges at the hetero-interface. We observe a flip in the transport direction at 110 K.

Subjects :: Materials science
business.industry
Gallium nitride
Heterojunction
Polarization (waves)
Photon counting
Quantitative Biology::Cell Behavior
law.invention
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
law
Electric field
Solar cell
Optoelectronics
Physics::Chemical Physics
business
Spectroscopy
Ultrashort pulse

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