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Formation, Morphology, and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC
- Source :
- The Journal of Physical Chemistry C. 121:4304-4311
- Publication Year :
- 2017
- Publisher :
- American Chemical Society (ACS), 2017.
-
Abstract
- 3C-SiC layers (7 and 15 μm thick), epitaxially grown on silicon, were covered with gold nanoparticles by immersion in a solution containing HF and KAuCl4. The surface of the layers played a crucial role in the morphology of the deposited metal network and large gold agglomerates developed on the pronounced antiphase domain boundaries of the thinner layer. Preferential growth was not observed on the smooth surface of the 15 μm thick layer. Rutherford backscattering spectrometry and electron microscopy outlined a progressive nucleation that takes place for less than 60 s immersion times under a kinetic control process. For longer deposition time each cluster grows under a diffusion control process, resulting in flower-like gold particles. However, the nucleation and growth processes can be strongly modified by multiple immersions in solution after rinsing in water. The adopted procedure allows the tailoring of the particles size and avoids the aggregation, therefore improving by about 1 order of magnitude t...
- Subjects :
- RAMAN-SCATTERING
Materials science
SURFACE
Silicon
Nucleation
chemistry.chemical_element
Nanotechnology
TRANSIENT
02 engineering and technology
010402 general chemistry
Epitaxy
01 natural sciences
SILICON-CARBIDE
Physical and Theoretical Chemistry
Deposition (law)
021001 nanoscience & nanotechnology
Rutherford backscattering spectrometry
SILICON-CARBIDE, ELECTROCHEMICAL NUCLEATION, MULTIPLE NUCLEATION, RAMAN-SCATTERING, ACTIVE-SITES, SURFACE, GROWTH, ELECTRODEPOSITION, TRANSIENT, DENSITY
0104 chemical sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
General Energy
Chemical engineering
chemistry
MULTIPLE NUCLEATION
Agglomerate
Colloidal gold
DENSITY
ELECTROCHEMICAL NUCLEATION
ELECTRODEPOSITION
ACTIVE-SITES
GROWTH
0210 nano-technology
Layer (electronics)
Subjects
Details
- ISSN :
- 19327455 and 19327447
- Volume :
- 121
- Database :
- OpenAIRE
- Journal :
- The Journal of Physical Chemistry C
- Accession number :
- edsair.doi.dedup.....483720dd1938ce8c03711a816517bb5d