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Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy
- Source :
- Physica status solidi. C, Conferences and critical reviews 6 (2006): 1583–1586. doi:10.1002/pssc.200565207, info:cnr-pdr/source/autori:T-H Kim, S. Choi1, P. Wu, A. Brown,M. Losurdo, M.M. Giangregorio, G. Bruno, A. Moto,/titolo:Real Time Spectroscopic Ellipsometry Investigation of Homoepitaxial GaN Grown by Plasma Assisted Molecular Beam Epitaxy/doi:10.1002%2Fpssc.200565207/rivista:Physica status solidi. C, Conferences and critical reviews/anno:2006/pagina_da: 1583/pagina_a:1586/intervallo_pagine: 1583–1586/volume:6, Nitride Semic, Bremen, 2005, info:cnr-pdr/source/autori:Tong-Ho Kim, Soojeong Choi, Pae Wu, April Brown, Maria Losurdo, Maria M Giangregorio, Giovanni Bruno, Akihiro Moto,/congresso_nome:Nitride Semic/congresso_luogo:Bremen/congresso_data:2005/anno:2005/pagina_da:/pagina_a:/intervallo_pagine
- Publication Year :
- 2006
- Publisher :
- Wiley, 2006.
-
Abstract
- The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710–780 °C. The thermal roughening of the GaN template caused by decomposition of the surface is investigated through the termporal variation of the GaN pseudodielectric function over the temperature range of 650 °C to 850 °C. The structural, morphological, and optical properties are also discussed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Details
- ISSN :
- 16101642 and 18626351
- Volume :
- 3
- Database :
- OpenAIRE
- Journal :
- physica status solidi c
- Accession number :
- edsair.doi.dedup.....490ad40362e52c08fd480773cf028d05