Defect Formation at Hydrophilic Silicon Bonding Interfaces

We report here on the energetics and kinetic processes of bonding interface defect formation, growth and dissolution for the standard silicon hydrophilic bonding case. We consider here silicon to silicon oxide bonding, i.e. native oxide against thermal oxide bonding. Water reaction with silicon upon annealing produces hydrogen which has to be managed in the interfacial zone and in the neighboring oxides. Defects are created when hydrogen gas pressure exceeds the interface strength [1,2]. Hence the capability of the oxide to absorb hydrogen, i.e. oxide thickness, temperature dependent solubility and the chemical form of hydrogen in the oxide are key factors which will be discussed (Fig.1).