Cite
Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
MLA
François Ducastelle, et al. Sublattice Dependence and Gate-Tunability of Midgap and Resonant States Induced by Native Dopants in Bernal-Stacked Bilayer Graphene. Sept. 2021. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....4b5ca2ca932a5115ac1cd8bfae900bb9&authtype=sso&custid=ns315887.
APA
François Ducastelle, Eberth A. Quezada-Lopez, Jairo Velasco, C. Bena, Frédéric Joucken, Zhehao Ge, Kenji Watanabe, & Takashi Tanagushi. (2021). Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene.
Chicago
François Ducastelle, Eberth A. Quezada-Lopez, Jairo Velasco, C. Bena, Frédéric Joucken, Zhehao Ge, Kenji Watanabe, and Takashi Tanagushi. 2021. “Sublattice Dependence and Gate-Tunability of Midgap and Resonant States Induced by Native Dopants in Bernal-Stacked Bilayer Graphene,” September. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....4b5ca2ca932a5115ac1cd8bfae900bb9&authtype=sso&custid=ns315887.