The Effect of Match between High Power Impulse and Bias Voltage: TiN Coating Deposited by High Power Impulse Magnetron Sputtering

Practical experience in the use of high power impulse magnetron sputtering (HiPIMS) technology has revealed that output bias current depends on the total energy output of the cathodes, which means that bias voltage settings do not necessarily match the actual output. In this study, we investigated the effects of bias current and voltage on the characteristics of titanium nitride thin films produced using high impulse magnetron sputtering. The bias current and voltage values were adjusted by varying the supplied cathode power and substrate bias under DC and pulsed-DC output models. Our results revealed that pulse delay (PD) and feed forward (FF) settings can be used to control bias current and voltage. Increasing the bias current from 0.56 to 0.84 was shown to alter the preferred orientation from (111) to (220), increase the deposition rate, and lead to a corresponding increase in film thickness. The surface morphology of all titanium nitride samples exhibited tapered planes attributable to the low bias current and voltage (−30 V). The maximum hardness values were as follows: DC mode (23 GPa) and pulsed-DC mode (19 GPa). The lower hardness values of pulsed-DC samples can be attributed to residual stress, preferred orientation, and surface morphology. The surface of the samples was shown to be hydrophobic, with contact angles of &gt
100°.