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AFM morphological characterization and Raman study of germanium grown on (111)GaAs
- Source :
- Surface science 606 (2012): 808–812. doi:10.1016/j.susc.2012.01.014, info:cnr-pdr/source/autori:Attolini, G. 1; Bosi M. 1; Calicchio, M 1; Martinez, O 2; Hortelano, V 2/titolo:AFM morphological characterization and Raman study of germanium grown on (111)GaAs/doi:10.1016%2Fj.susc.2012.01.014/rivista:Surface science/anno:2012/pagina_da:808/pagina_a:812/intervallo_pagine:808–812/volume:606
- Publication Year :
- 2012
- Publisher :
- Elsevier BV, 2012.
-
Abstract
- In this communication we report on the growth of Ge heterolayers on (100), (111)Ga and (111)As surfaces of GaAs substrates. Arsenic can play a role as both dopant and surfactant, changing the growth mechanism for the Ge/GaAs growth on (001) oriented substrates. The use of substrates oriented in different directions can change the growth mode and produce different results, since surface polarity can induce different growth modes: we have compared the results on (111) substrates with respect to the non-polar surface case. The growth behavior on (001), (111)Ga and (111)As substrates is discussed. The layer morphology was investigated by Atomic Force Microscopy and Raman spectroscopy has been carried out as a function of the sample thickness.
- Subjects :
- Materials science
Morphology (linguistics)
Dopant
Germanium
business.industry
chemistry.chemical_element
Growth
Surfaces and Interfaces
Condensed Matter Physics
Surfaces, Coatings and Films
Characterization (materials science)
Crystallography
symbols.namesake
chemistry
Pulmonary surfactant
Materials Chemistry
symbols
Optoelectronics
AFM
Raman spectroscopy
business
Raman
Layer (electronics)
Arsenic
Subjects
Details
- ISSN :
- 00396028
- Volume :
- 606
- Database :
- OpenAIRE
- Journal :
- Surface Science
- Accession number :
- edsair.doi.dedup.....4dae546555d1516edfe6ba86db8afe06