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Metamorphic high electron mobility Te-doped AlInSb/GaInSb heterostructures on InP (001)
- Source :
- Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.066105-1-3. ⟨10.1063/1.2978365⟩, Journal of Applied Physics, 2008, 104 (6), pp.066105. ⟨10.1063/1.2978365⟩
- Publication Year :
- 2008
- Publisher :
- HAL CCSD, 2008.
-
Abstract
- This work reports on the Te δ-doping of high electron mobility AlInSb/GaInSb heterostructures grown by molecular beam epitaxy on InP(001) substrates with a metamorphic approach. The combination of atomic force microscopy and van der Pauw measurements is used to investigate and explain the influence of the buffer layers on the electron mobility and sheet density in the heterostructure. Furthermore, a significant increase in the electron sheet density is reached when the δ-doping plane is incorporated in a thin AlSb layer introduced in the barrier. This improvement is explained by the lower dopant activation energy in the AlSb layer. AlInSb/GaInSb heterostructures with an electron mobility of 18 000 cm2/V s and sheet density of 2.2×1012 cm−2 at room temperature are demonstrated.
- Subjects :
- 010302 applied physics
Electron mobility
Materials science
business.industry
Doping
General Physics and Astronomy
Heterojunction
02 engineering and technology
Electron
Dopant Activation
021001 nanoscience & nanotechnology
01 natural sciences
[SPI.TRON]Engineering Sciences [physics]/Electronics
Van der Pauw method
Semiconductor
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Molecular beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979 and 10897550
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.066105-1-3. ⟨10.1063/1.2978365⟩, Journal of Applied Physics, 2008, 104 (6), pp.066105. ⟨10.1063/1.2978365⟩
- Accession number :
- edsair.doi.dedup.....4e88910757c061e91e746a82b42df549
- Full Text :
- https://doi.org/10.1063/1.2978365⟩