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Metamorphic high electron mobility Te-doped AlInSb/GaInSb heterostructures on InP (001)

Authors :
Ludovic Desplanque
G. Delhaye
Xavier Wallart
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :
Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.066105-1-3. ⟨10.1063/1.2978365⟩, Journal of Applied Physics, 2008, 104 (6), pp.066105. ⟨10.1063/1.2978365⟩
Publication Year :
2008
Publisher :
HAL CCSD, 2008.

Abstract

This work reports on the Te δ-doping of high electron mobility AlInSb/GaInSb heterostructures grown by molecular beam epitaxy on InP(001) substrates with a metamorphic approach. The combination of atomic force microscopy and van der Pauw measurements is used to investigate and explain the influence of the buffer layers on the electron mobility and sheet density in the heterostructure. Furthermore, a significant increase in the electron sheet density is reached when the δ-doping plane is incorporated in a thin AlSb layer introduced in the barrier. This improvement is explained by the lower dopant activation energy in the AlSb layer. AlInSb/GaInSb heterostructures with an electron mobility of 18 000 cm2/V s and sheet density of 2.2×1012 cm−2 at room temperature are demonstrated.

Details

Language :
English
ISSN :
00218979 and 10897550
Database :
OpenAIRE
Journal :
Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.066105-1-3. ⟨10.1063/1.2978365⟩, Journal of Applied Physics, 2008, 104 (6), pp.066105. ⟨10.1063/1.2978365⟩
Accession number :
edsair.doi.dedup.....4e88910757c061e91e746a82b42df549
Full Text :
https://doi.org/10.1063/1.2978365⟩