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Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain
- Source :
- Applied Physics Letters, vol 111, iss 23, Hwang, C; Hwang, J; Lee, JE; Denlinger, J; & Mo, SK. (2017). Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain. Applied Physics Letters, 111(23). doi: 10.1063/1.4986425. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/8pd931f3
- Publication Year :
- 2017
- Publisher :
- eScholarship, University of California, 2017.
-
Abstract
- © 2017 Author(s). We have investigated the electron band structure of graphene epitaxially grown on an SiC substrate using angle-resolved photoemission spectroscopy. The conical energy spectrum of graphene exhibits a minimum slope at ∼50 K, which is accompanied by the minimum separation between its two branches. These observations provide a viable route towards the engineering of the electronic properties of graphene using temperature, while the latter suggests a possible evidence of gap engineering via strain induced by the substrate and modulated by temperature.
- Subjects :
- Technology
Materials science
Physics and Astronomy (miscellaneous)
Graphene
Photoemission spectroscopy
Band gap
02 engineering and technology
Electronic structure
Electron
Substrate (electronics)
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
law.invention
Engineering
Chemical physics
law
0103 physical sciences
Physical Sciences
010306 general physics
0210 nano-technology
Electronic band structure
Applied Physics
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters, vol 111, iss 23, Hwang, C; Hwang, J; Lee, JE; Denlinger, J; & Mo, SK. (2017). Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain. Applied Physics Letters, 111(23). doi: 10.1063/1.4986425. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/8pd931f3
- Accession number :
- edsair.doi.dedup.....4e9979f033cf5653325ece913f9b613e