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3–3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages
- Source :
- IEEE Transactions on Microwave Theory and Techniques. 60:2543-2548
- Publication Year :
- 2012
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2012.
-
Abstract
- We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3-3.6-GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT and shows, at 6 dB of output power back-off, a drain efficiency higher than 38% in the 3-3.6-GHz band, gain around 10 dB, and maximum power between 43 and 44 dBm, with saturated efficiency between 55% and 66%. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20 W suggests that the power utilization factor of the 10-W (Class A) GaN HEMT is excellent over the amplifier band.
- Subjects :
- WiMAX
wideband microwave amplifiers
Engineering
Power-added efficiency
Radiation
FET amplifier
business.industry
Amplifier
Doherty power amplifiers (PAs)
RF power amplifier
Electrical engineering
Power bandwidth
Condensed Matter Physics
Broadband matching networks
Fully differential amplifier
Electronic engineering
Linear amplifier
GaN-based field-effect transistors (FETs)
Electrical and Electronic Engineering
business
Direct-coupled amplifier
Subjects
Details
- ISSN :
- 15579670 and 00189480
- Volume :
- 60
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Microwave Theory and Techniques
- Accession number :
- edsair.doi.dedup.....4ece7f23a0e42d4410cce5b0dcf6ffc5
- Full Text :
- https://doi.org/10.1109/tmtt.2012.2201745