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3–3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages

Authors :
Jorge Moreno Rubio
Jie Fang
Roberto Quaglia
Marco Pirola
Giovanni Ghione
Vittorio Camarchia
Source :
IEEE Transactions on Microwave Theory and Techniques. 60:2543-2548
Publication Year :
2012
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2012.

Abstract

We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3-3.6-GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT and shows, at 6 dB of output power back-off, a drain efficiency higher than 38% in the 3-3.6-GHz band, gain around 10 dB, and maximum power between 43 and 44 dBm, with saturated efficiency between 55% and 66%. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20 W suggests that the power utilization factor of the 10-W (Class A) GaN HEMT is excellent over the amplifier band.

Details

ISSN :
15579670 and 00189480
Volume :
60
Database :
OpenAIRE
Journal :
IEEE Transactions on Microwave Theory and Techniques
Accession number :
edsair.doi.dedup.....4ece7f23a0e42d4410cce5b0dcf6ffc5
Full Text :
https://doi.org/10.1109/tmtt.2012.2201745