Experimental analysis of electro-thermal interaction in normally-off pGaN HEMT devices

This work discusses about the electro-thermal behavior of normally-off pGaN HEMT devices. The experimental analysis is conducted on two commercially available, voltage-driven, devices. The validity of iso-thermal condition during DC characterization is discussed with reference to the pulsed technique and the impact of pulse-width. Temperature coefficients for threshold-voltage and on-state resistance are evaluated and compared with those of Silicon devices. Finally, measurements and mission-profile SPICE thermal simulations are carried out to estimate the maximum device temperature during short-circuit operation before failure event.