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Role of interfaces on the direct tunneling and the inelastic tunneling behaviors through metal/alkylsilane/silicon junctions
- Source :
- Trends in NanoTechnology, TNT 2005, Trends in NanoTechnology, TNT 2005, 2005, Oviedo, Spain, HAL
- Publication Year :
- 2005
- Publisher :
- HAL CCSD, 2005.
-
Abstract
- We studied the influence of the end group of the alkylsilane molecule used in Self Assembled Monolayer (SAM) in Silicon/SAM/Metal junctions. By Inelastic Electron Tunneling spectroscopy (IETS), we showed the formation of a covalent bond between the molecules and the gold electrode in the case of a thiol terminated alkylsilane. By electrical characterizations, we demonstrated that the thiol group at the interface avoids diffusion of gold into the molecule even for a 3 carbons chain. For this short molecule, we observed pure tunnel conduction with barrier height at the monolayer/Si and monolayer/Au interfaces found to be respectively 2.14 and 2.56 eV. These values were obtained using Simmons equation with an effective mass parameter m* = 0.16m e (m e = mass of the electron).This extends the demonstration of the excellent tunnel dielectric behavior of these organic monolayers down to 3 carbon atoms with a thiol/Au bond at the interface.
- Subjects :
- Silicon
Chemistry
Inelastic electron tunneling spectroscopy
Analytical chemistry
chemistry.chemical_element
Self-assembled monolayer
02 engineering and technology
Surfaces and Interfaces
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
0104 chemical sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Effective mass (solid-state physics)
Covalent bond
Monolayer
Materials Chemistry
Molecule
Physical chemistry
Electrical and Electronic Engineering
0210 nano-technology
Quantum tunnelling
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Trends in NanoTechnology, TNT 2005, Trends in NanoTechnology, TNT 2005, 2005, Oviedo, Spain, HAL
- Accession number :
- edsair.doi.dedup.....4f3819f39104e0cb86b6f7273ae4881a