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Role of interfaces on the direct tunneling and the inelastic tunneling behaviors through metal/alkylsilane/silicon junctions

Authors :
C. Petit
J. V. Yakhmi
G. Salace
Stéphane Lenfant
David Guerin
Dominique Vuillaume
Dinesh K. Aswal
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :
Trends in NanoTechnology, TNT 2005, Trends in NanoTechnology, TNT 2005, 2005, Oviedo, Spain, HAL
Publication Year :
2005
Publisher :
HAL CCSD, 2005.

Abstract

We studied the influence of the end group of the alkylsilane molecule used in Self Assembled Monolayer (SAM) in Silicon/SAM/Metal junctions. By Inelastic Electron Tunneling spectroscopy (IETS), we showed the formation of a covalent bond between the molecules and the gold electrode in the case of a thiol terminated alkylsilane. By electrical characterizations, we demonstrated that the thiol group at the interface avoids diffusion of gold into the molecule even for a 3 carbons chain. For this short molecule, we observed pure tunnel conduction with barrier height at the monolayer/Si and monolayer/Au interfaces found to be respectively 2.14 and 2.56 eV. These values were obtained using Simmons equation with an effective mass parameter m* = 0.16m e (m e = mass of the electron).This extends the demonstration of the excellent tunnel dielectric behavior of these organic monolayers down to 3 carbon atoms with a thiol/Au bond at the interface.

Details

Language :
English
Database :
OpenAIRE
Journal :
Trends in NanoTechnology, TNT 2005, Trends in NanoTechnology, TNT 2005, 2005, Oviedo, Spain, HAL
Accession number :
edsair.doi.dedup.....4f3819f39104e0cb86b6f7273ae4881a