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The Effect of Surface Terminations on the Initial Stages of TiO2 Deposition on Functionalized Silicon

Authors :
Tyler Parke
Dhamelyz Silva‐Quinones
George T. Wang
Andrew V. Teplyakov
Source :
Chemphyschem : a European journal of chemical physics and physical chemistry.
Publication Year :
2022

Abstract

As atomic layer deposition (ALD) emerges as a method to fabricate architectures with atomic precision, emphasis is placed on understanding surface reactions and nucleation mechanisms. ALD of titanium dioxide with TiCl 4 and water has been used to investigate deposition processes in general, but the effect of surface termination on the initial TiO 2 nucleation lacks needed mechanistic insights. This work examines the adsorption of TiCl 4 on Cl-, H-, and -OH terminated Si(100) and Si(111) surfaces to elucidate the general role of different surface structures and defect types in manipulating surface reactivity of growth and non-growth substrates. The surface sites and their role in the initial stages of deposition are examined by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Density functional theory (DFT) computations of the local functionalized silicon surfaces suggest oxygen-containing defects are primary drivers of selectivity loss on these surfaces.

Details

ISSN :
14397641
Database :
OpenAIRE
Journal :
Chemphyschem : a European journal of chemical physics and physical chemistry
Accession number :
edsair.doi.dedup.....50261edf2526514936396b6903aec61f