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Stable Above-Threshold Linewidth Enhancement Factor in a 1.52μm InAs/InP (311B) Quantum Dot Laser
- Source :
- LEOS, LEOS, Nov 2008, United States
- Publication Year :
- 2008
- Publisher :
- HAL CCSD, 2008.
-
Abstract
- The alphaH-factor behavior with current is investigated in a 1.52 mum InAs/InP (311B) QD laser. It is shown that due to low gain compression effects, no divergence of the alphaH-factor occurs unlike 1.3 mum InAs/GaAs QD lasers.
- Subjects :
- [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics]
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Materials science
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic
business.industry
Low gain
020208 electrical & electronic engineering
02 engineering and technology
Laser
3. Good health
law.invention
Gallium arsenide
chemistry.chemical_compound
Laser linewidth
020210 optoelectronics & photonics
chemistry
Quantum dot laser
law
0202 electrical engineering, electronic engineering, information engineering
Indium phosphide
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Optoelectronics
business
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- LEOS, LEOS, Nov 2008, United States
- Accession number :
- edsair.doi.dedup.....50cd3f375883ffd6423dc395a2368c69