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Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF-PVT Process

Authors :
Francis Baillet
Guy Chichignoud
Didier Chaussende
Magali Ucar
Elisabeth Blanquet
Laboratoire des matériaux et du génie physique (LMGP )
Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM)
Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)
NOVASiC
Science et Ingénierie des Matériaux et Procédés (SIMaP)
Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)
Source :
Chemical Vapor Deposition, Chemical Vapor Deposition, Wiley-VCH Verlag, 2006, 12 (8-9), pp.541-548. ⟨10.1002/cvde.200606471⟩, Chemical Vapor Deposition, Wiley-VCH Verlag, 2006, 12 (8-9), pp.541-548
Publication Year :
2006
Publisher :
Wiley, 2006.

Abstract

International audience; We investigated experimentally together with thermodynamic and Computation Fluid Dynamics calculations, the main trends which govern the Continuous Feed-Physical Vapour Transport bulk crystal growth process. Several chemical systems were considered. An analysis of the chemistry of every successive step: Chemical Vapour Deposition (CVD), transfer and Physical Vapour Transport (PVT) is, first, presented. The effects of hydrogen and chlorine are investigated. Next, the interaction between the different steps is discussed. We demonstrate that the strong chemical interaction which exists between both the CVD and the PVT zones implies to consider the whole process and not the two zones separately.

Details

ISSN :
15213862 and 09481907
Volume :
12
Database :
OpenAIRE
Journal :
Chemical Vapor Deposition
Accession number :
edsair.doi.dedup.....51912bfc585b2a1dc17d5ec2570c7864
Full Text :
https://doi.org/10.1002/cvde.200606471