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Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF-PVT Process
- Source :
- Chemical Vapor Deposition, Chemical Vapor Deposition, Wiley-VCH Verlag, 2006, 12 (8-9), pp.541-548. ⟨10.1002/cvde.200606471⟩, Chemical Vapor Deposition, Wiley-VCH Verlag, 2006, 12 (8-9), pp.541-548
- Publication Year :
- 2006
- Publisher :
- Wiley, 2006.
-
Abstract
- International audience; We investigated experimentally together with thermodynamic and Computation Fluid Dynamics calculations, the main trends which govern the Continuous Feed-Physical Vapour Transport bulk crystal growth process. Several chemical systems were considered. An analysis of the chemistry of every successive step: Chemical Vapour Deposition (CVD), transfer and Physical Vapour Transport (PVT) is, first, presented. The effects of hydrogen and chlorine are investigated. Next, the interaction between the different steps is discussed. We demonstrate that the strong chemical interaction which exists between both the CVD and the PVT zones implies to consider the whole process and not the two zones separately.
- Subjects :
- Hydrogen
business.industry
Chemistry
020502 materials
Process Chemistry and Technology
Computation
Thermodynamics
chemistry.chemical_element
[CHIM.MATE]Chemical Sciences/Material chemistry
02 engineering and technology
Surfaces and Interfaces
General Chemistry
Chemical interaction
Computational fluid dynamics
021001 nanoscience & nanotechnology
0205 materials engineering
Scientific method
Fluid dynamics
Physical chemistry
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering
0210 nano-technology
business
Subjects
Details
- ISSN :
- 15213862 and 09481907
- Volume :
- 12
- Database :
- OpenAIRE
- Journal :
- Chemical Vapor Deposition
- Accession number :
- edsair.doi.dedup.....51912bfc585b2a1dc17d5ec2570c7864
- Full Text :
- https://doi.org/10.1002/cvde.200606471