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Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection

Authors :: Miltcho B. Danailov
Fulvia Arfelli
Luca Selmi
C. Nichetti
Francesco Driussi
Pierpaolo Palestri
T. Steinhartova
G. Cautero
M. Antonelli
D. De Angelis
R.H. Menk
A. Pilotto
Giorgio Biasiol
Nichetti, C.
Steinhartova, T.
Antonelli, M.
Biasiol, G.
Cautero, G.
De Angelis, D.
Pilotto, A.
Driussi, F.
Palestri, P.
Selmi, L.
Arfelli, F.
Danailov, M.
Menk, R. H.
Source :: Journal of instrumentation 15 (2020). doi:10.1088/1748-0221/15/02/C02013, info:cnr-pdr/source/autori:Nichetti, C.; Steinhartova, T.; Antonelli, M.; Biasiol, G.; Cautero, G.; De Angelis, D.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Danailov, M.; Menk, R. H./titolo:Effects of p doping on GaAs%2FAlGaAs SAM-APDs for X-rays detection/doi:10.1088%2F1748-0221%2F15%2F02%2FC02013/rivista:Journal of instrumentation/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:15
Publication Year :: 2020
Publisher :: Institute of Physics Publishing, Bristol , Regno Unito, 2020.
Abstract: This work focuses on avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM-APDs). The two regions are separated by a thin p-doped layer which, under the application of a reverse bias, is able to confine the potential drop only in the multiplication region. We realized such layer under the form of either a delta sheet of C atoms or a 50-nm-thick GaAs:C layer. Devices with these two structures will be discussed and compared in terms of capacitance and response to light.

Details

Language :: English
Database :: OpenAIRE
Journal :: Journal of instrumentation 15 (2020). doi:10.1088/1748-0221/15/02/C02013, info:cnr-pdr/source/autori:Nichetti, C.; Steinhartova, T.; Antonelli, M.; Biasiol, G.; Cautero, G.; De Angelis, D.; Pilotto, A.; Driussi, F.; Palestri, P.; Selmi, L.; Arfelli, F.; Danailov, M.; Menk, R. H./titolo:Effects of p doping on GaAs%2FAlGaAs SAM-APDs for X-rays detection/doi:10.1088%2F1748-0221%2F15%2F02%2FC02013/rivista:Journal of instrumentation/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:15
Accession number :: edsair.doi.dedup.....532643016e915d8f8b7fcfb4eb52b1f7
Full Text :: https://doi.org/10.1088/1748-0221/15/02/C02013