Back to Search
Start Over
Effects of Fabrication Parameters on the Electrical Stability of Gate Overlapped Lightly Doped Drain Polysilicon Thin-Film Transistors
- Source :
- Japanese journal of applied physics 45 (2006): 4384–4388. doi:10.1143/JJAP.45.4384, info:cnr-pdr/source/autori:Bonfiglietti, Alessandra; Valletta, Antonio; Rapisarda, Matteo; Mariucci, Luigi; Fortunato, Guglielmo/titolo:Effects of fabrication parameters on the electrical stability of gate overlapped lightly doped drain polysilicon thin-film transistors/doi:10.1143%2FJJAP.45.4384/rivista:Japanese journal of applied physics/anno:2006/pagina_da:4384/pagina_a:4388/intervallo_pagine:4384–4388/volume:45
- Publication Year :
- 2006
- Publisher :
- IOP Publishing, 2006.
-
Abstract
- We analysed the electrical characteristics and the stability of gate overlapped lightly doped drain (GOLDD) thin-film transistors (TFTs) with different channel length, n- region doping concentration and lateral doping profile at the junctions. A reduction of kink effect and an increase of device stability have been observed with the increase of the lateral doping profile. These results are explained by numerical simulation of electrical characteristics and hot carrier induced degradation. We found that different doping profiles produce, after bias stress, different interface state distributions across the channel/n- and n-/n+ junctions.
- Subjects :
- inorganic chemicals
Fabrication
Materials science
genetic structures
Physics and Astronomy (miscellaneous)
Gate overlapped lightly doped drain (GOLDD)
General Physics and Astronomy
Electrical stability
Bias stress
law.invention
Condensed Matter::Materials Science
law
Condensed Matter::Superconductivity
Hot carrier effect (HCE)
Doping profile
Thin-film transistors (TFTs)
Kink effect
business.industry
Transistor
Doping
technology, industry, and agriculture
General Engineering
social sciences
Thin-film transistor
Optoelectronics
Degradation (geology)
lipids (amino acids, peptides, and proteins)
Condensed Matter::Strongly Correlated Electrons
business
human activities
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 45
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....5480f80563e2e53819c2a992ecf02029