Back to Search
Start Over
SiC Vertical JFET Pure Diode-Less Inverter Leg
- Source :
- Proceedings of the 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition, APEC, APEC, Mar 2013, Long Beach, CA, United States. pp.512-517, ⟨10.1109/APEC.2013.6520258⟩
- Publication Year :
- 2013
- Publisher :
- HAL CCSD, 2013.
-
Abstract
- International audience; The aim of this paper is to investigate the ability of a vertical structure JFET to operate in an inverter leg without any internal or external diode. The JFET is characterized to show the reverse conduction capability while the gate-to-source voltage is lower than the threshold voltage. An inverter leg is tested at 540 V /5 A and 50 kHz. A specific test board is implemented to assess a safe operation over a period of time.
- Subjects :
- Materials science
Silicon Carbide
business.industry
020208 electrical & electronic engineering
05 social sciences
[SPI.NRJ]Engineering Sciences [physics]/Electric power
Electrical engineering
Vertical JFET
JFET
02 engineering and technology
Thermal conduction
Threshold voltage
chemistry.chemical_compound
Safe operation
chemistry
Diode Less
0202 electrical engineering, electronic engineering, information engineering
Silicon carbide
Inverter
0501 psychology and cognitive sciences
Inverter Leg
business
050107 human factors
Voltage
Diode
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Proceedings of the 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition, APEC, APEC, Mar 2013, Long Beach, CA, United States. pp.512-517, ⟨10.1109/APEC.2013.6520258⟩
- Accession number :
- edsair.doi.dedup.....54e3cbf4ef65c26e399f3868b234f94a
- Full Text :
- https://doi.org/10.1109/APEC.2013.6520258⟩