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High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

Authors :
Henryk Temkin
G. A. Seryogin
Sebastien Francoeur
Sergey A. Nikishin
V. G. Antipov
Stefan Zollner
A. Konkar
Mark Holtz
T. Prokofyeva
V. A. Elyukhin
N. N. Faleev
Source :
Scopus-Elsevier
Publication Year :
1999
Publisher :
AIP Publishing, 1999.

Abstract

Hexagonal AlN layers were grown on Si(111) by gas-source molecular-beam epitaxy with ammonia. The transition between the (7×7) and (1×1) silicon surface reconstructions, at 1100 K, was used for in situ calibration of the substrate temperature. The initial deposition of Al, at 1130–1190 K, produced an effective nucleation layer for the growth of AlN. The Al layer also reduced islands of SiNx that might be formed due to background NH3 on the silicon surface prior to the onset of epitaxial growth. The transition to two-dimensional growth mode, under optimum conditions, was obtained after the initial AlN thickness of ∼7 nm.

Details

ISSN :
10773118 and 00036951
Volume :
75
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi.dedup.....555b52a3223bc77afc595e58bbc052e5
Full Text :
https://doi.org/10.1063/1.124423