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High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia
- Source :
- Scopus-Elsevier
- Publication Year :
- 1999
- Publisher :
- AIP Publishing, 1999.
-
Abstract
- Hexagonal AlN layers were grown on Si(111) by gas-source molecular-beam epitaxy with ammonia. The transition between the (7×7) and (1×1) silicon surface reconstructions, at 1100 K, was used for in situ calibration of the substrate temperature. The initial deposition of Al, at 1130–1190 K, produced an effective nucleation layer for the growth of AlN. The Al layer also reduced islands of SiNx that might be formed due to background NH3 on the silicon surface prior to the onset of epitaxial growth. The transition to two-dimensional growth mode, under optimum conditions, was obtained after the initial AlN thickness of ∼7 nm.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 75
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....555b52a3223bc77afc595e58bbc052e5
- Full Text :
- https://doi.org/10.1063/1.124423